Icyiciro cyibicuruzwa

Ishusho Umubare wibicuruzwa Encapsulation Gupakira Ibisobanuro Urupapuro rwamakuru
UMW FDV303N SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):25V;Umuyoboro uhoraho (Id) (kuri 25 ° C):0.68A;Vgs(th)(V):±8;Drain-source on-resistance:42mΩ@0.2A,2.7V;Drain-source on-resistance:28mΩ@0.5A,4.5V
UMW FDN360P SOT-23 卷装 Ubwoko bwa:P-Channel;Umuyoboro w'amazi uturuka (Vdss):-30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):-2A;Vgs(th)(V):±20;Drain-source on-resistance:80mΩ@-2A,-10V;Drain-source on-resistance:125mΩ@-1.5A,-4.5V
UMW FDN337N SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):2.2A;Vgs(th)(V):±8;Drain-source on-resistance:82mΩ@2A,2.5V;Drain-source on-resistance:65mΩ@2.2A,4.5V
UMW BSS308PE SOT-23 卷装 Ubwoko bwa:P-Channel;Umuyoboro w'amazi uturuka (Vdss):-30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):-2A;Vgs(th)(V):±20;Drain-source on-resistance:80mΩ@-2A,-10V;Drain-source on-resistance:130mΩ@-1.7A,-4.5V
UMW BSO615NG SOP-8 卷装 Ubwoko bwa:N+N-Channel;Umuyoboro w'amazi uturuka (Vdss):60V;Umuyoboro uhoraho (Id) (kuri 25 ° C):7A;Vgs(th)(V):±20;Drain-source on-resistance:40mΩ@A,10V;Drain-source on-resistance:55mΩ@4A,4.5V
UMW AO4616 SOP-8 卷装 Ubwoko bwa:N+P-Channel;Umuyoboro w'amazi uturuka (Vdss):N:30V ;P:-30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):N:8A ;P: -7A;Vgs(th)(V):±20;Drain-source on-resistance:N:20mΩ@8A,10V;28mΩ@6A,4.5V;Drain-source on-resistance:P:22mΩ@8A,10V;40mΩ@6A,4.5V
UMW NTD24N06LT4G TO-252 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):60V;Umuyoboro uhoraho (Id) (kuri 25 ° C):35A;Vgs(th)(V):±35;Drain-source on-resistance:31mΩ@15A,10V;Drain-source on-resistance:45mΩ@10A,4.5V
UMW AO4419 SOP-8 卷装 Ubwoko bwa:P-Channel;Umuyoboro w'amazi uturuka (Vdss):-30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):-9.7A;Vgs(th)(V):±20;Drain-source on-resistance:20mΩ@-9.7A,-10V;Drain-source on-resistance:35mΩ@-7A,-4.5V
UMW AO4411 SOP-8 卷装 Ubwoko bwa:P-Channel;Umuyoboro w'amazi uturuka (Vdss):-30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):-18A;Vgs(th)(V):±12;Drain-source on-resistance:32mΩ@-8A,-10V;Drain-source on-resistance:55mΩ@-5A,-4.5V
UMW IRLML2060TR SOP-8 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):60V;Umuyoboro uhoraho (Id) (kuri 25 ° C):1.2A;Vgs(th)(V):±16;Drain-source on-resistance:85mΩ@1.2A,10V;Drain-source on-resistance:99mΩ@0.96A,4.5V
UMW IRLML2030TR SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):2.7A;Vgs(th)(V):±20;Drain-source on-resistance:100mΩ@2.7A,10V;Drain-source on-resistance:154mΩ@2.2A,4.5V
UMW IRF7807TR SOP-8 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):11A;Vgs(th)(V):±20;Drain-source on-resistance:13.8mΩ@11A,10V;Drain-source on-resistance:18.2mΩ@8.8A,4.5V
UMW IRF7413TR SOP-8 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):13A;Vgs(th)(V):±20;Drain-source on-resistance:12mΩ@7.3A,10V;Drain-source on-resistance:17mΩ@3.7A,4.5V
UMW IRF7301TR SOP-8 卷装 Ubwoko bwa:N+N-Channel;Umuyoboro w'amazi uturuka (Vdss):20V;Umuyoboro uhoraho (Id) (kuri 25 ° C):5.7A;Vgs(th)(V):±12;Drain-source on-resistance:50mΩ@2.2A,-2.7V;Drain-source on-resistance:40mΩ@2.6A,4.5V
UMW FDV305N SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):20V;Umuyoboro uhoraho (Id) (kuri 25 ° C):0.9A;Vgs(th)(V):±12;Drain-source on-resistance:60mΩ@0.7A,2.5V;Drain-source on-resistance:45mΩ@0.9A,4.5V
UMW FDN361BN SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):1.4A;Vgs(th)(V):±20;Drain-source on-resistance:110mΩ@1.4A,10V;Drain-source on-resistance:160mΩ@1.2A,4.5V
UMW FDN359BN SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):2.7A;Vgs(th)(V):±20;Drain-source on-resistance:46mΩ@2.7A,10V;Drain-source on-resistance:60mΩ@2.4A,4.5V
UMW FDN359AN SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):30V;Umuyoboro uhoraho (Id) (kuri 25 ° C):2.7A;Vgs(th)(V):±20;Drain-source on-resistance:46mΩ@2.7A,10V;Drain-source on-resistance:60mΩ@2.4A,4.5V
UMW FDN336P SOT-23 卷装 Ubwoko bwa:P-Channel;Umuyoboro w'amazi uturuka (Vdss):-20V;Umuyoboro uhoraho (Id) (kuri 25 ° C):-1.3A;Vgs(th)(V):±8;Drain-source on-resistance:108mΩ@-1.1A,-2.5V;Drain-source on-resistance:91mΩ@-1.3A,-4.5V
UMW FDN327N SOT-23 卷装 Ubwoko bwa:N-Channel;Umuyoboro w'amazi uturuka (Vdss):20V;Umuyoboro uhoraho (Id) (kuri 25 ° C):2A;Vgs(th)(V):±8;Drain-source on-resistance:120mΩ@1.6A,1.8V;Drain-source on-resistance:80mΩ@1.9A,2.5V;Drain-source on-resistance:70mΩ@2A,4.5V