uber Numerus

Image Product Number encapsulation packaging Description Data Sheet
UMW 2N65G SOT-223 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):2A;Vgs(th)(V):±30;Exhaurire fons-on-resistentiam:4.5Ω@1A,10V
UMW 2N60G SOT-223 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):600V;Continua exhauriunt current (j) (ad XXV ° C):2A;Vgs(th)(V):±30;Exhaurire fons-on-resistentiam:4.5Ω@1A,10V
UMW 1N65L TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):1A;Vgs(th)(V):±30;Exhaurire fons-on-resistentiam:11Ω@0.5A,10V
UMW 1N60L TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):600V;Continua exhauriunt current (j) (ad XXV ° C):1A;Vgs(th)(V):±30;Exhaurire fons-on-resistentiam:11Ω@0.5A,10V
UMW AO4407A SOP-8 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-14A;Vgs(th)(V):±25;Exhaurire fons-on-resistentiam:11.5mΩ@-14A,-10V;Exhaurire fons-on-resistentiam:18.5mΩ@-5A,-4.5V
UMW 20N06 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):20A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:29mΩ@15A,10V;Exhaurire fons-on-resistentiam:40mΩ@10A,4.5V
UMW 25N06 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):25A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:29mΩ@19A,10V;Exhaurire fons-on-resistentiam:38mΩ@19A,4.5V
UMW 35N06 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:29mΩ@19A,10V;Exhaurire fons-on-resistentiam:38mΩ@19A,4.5V
UMW FDN335N SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):1.7A;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:100mΩ@1.5A,2.5V;Exhaurire fons-on-resistentiam:70mΩ@1.7A,4.5V
UMW FDN340P SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-2A;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:210mΩ@-1.2A,-1.8V;Exhaurire fons-on-resistentiam:70mΩ@-2A,-4.5V
UMW SI2309A SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-60V;Continua exhauriunt current (j) (ad XXV ° C):-1.25A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:340mΩ@-1.25A,-10V;Exhaurire fons-on-resistentiam:550mΩ@-1A,-4.5V
UMW SI2310A SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):3A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:80mΩ@3A,10V;Exhaurire fons-on-resistentiam:95mΩ@2A,4.5V
UMW SVT078R0ND TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):68V;Continua exhauriunt current (j) (ad XXV ° C):88A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:7.5mΩ@30A,10V
UMW STD20NF06L TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):30A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:35mΩ@15A,10V;Exhaurire fons-on-resistentiam:40mΩ@10A,4.5V
UMW 40N06 TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):55A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:18mΩ@30A,10V;Exhaurire fons-on-resistentiam:22mΩ@20A,4.5V
UMW 50N06 T0-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:17mΩ@30A,10V;Exhaurire fons-on-resistentiam:21mΩ@20A,4.5V
UMW 100N03A TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):90A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:4.9mΩ@30A,10V;Exhaurire fons-on-resistentiam:7.9mΩ@20A,4.5V
UMW 30N03A TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):90A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5mΩ@30A,10V;Exhaurire fons-on-resistentiam:8mΩ@20A,4.5V
UMW 30N06 TO-252 Roll Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):50A;Fons limine portae-voltage:2.5V @ 250uA;Exhaurire fons-on-resistentiam:29mΩ@15A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):34.7W(Tc);genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:40mΩ@10A,4.5V
UMW NDC7002N SOT23-6 Roll Exhaurire fons-voltage (Vdss):50V;Continua exhauriunt current (j) (ad XXV ° C):0.51A;Fons limine portae-voltage:2.5V @ 250uA;Exhaurire fons-on-resistentiam:2Ω@0.51A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):700mW;genera:N+N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:4Ω@0.35A,4.5V