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uber Numerus

Image Product Number encapsulation packaging Description Data Sheet
UMW SUD50P06-15 TO-252 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-60V;Continua exhauriunt current (j) (ad XXV ° C):-50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:25mΩ@-10V
UMW HUF76609D3 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):10A;Vgs(th)(V):±16;Exhaurire fons-on-resistentiam:150mΩ@10V
UMW FDD1600N10ALZ TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):3.4A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:160mΩ@10V
UMW FQD7N10LTM TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):2.9A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:350mΩ@10V
UMW IRF8113TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):17.2A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5.6mΩ@10V;Exhaurire fons-on-resistentiam:6.8mΩ@4.5V
UMW FDS6612A SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):8.4A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:22mΩ@10V;Exhaurire fons-on-resistentiam:30mΩ@4.5V
UMW FDS8884 SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):8.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:23mΩ@10V;Exhaurire fons-on-resistentiam:30mΩ@4.5V
UMW FDD6680AS TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:10.5mΩ@10V;Exhaurire fons-on-resistentiam:13mΩ@4.5V
UMW FDD8780 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:8.5mΩ@10V;Exhaurire fons-on-resistentiam:12mΩ@4.5V
UMW NTD4860NT4G TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):65A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:7.5mΩ@10V;Exhaurire fons-on-resistentiam:11.1mΩ@4.5V
UMW AOD508 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):70A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:3mΩ@10V;Exhaurire fons-on-resistentiam:4.5mΩ@4.5V
UMW FDD8874 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5.1mΩ@10V;Exhaurire fons-on-resistentiam:6.4mΩ@4.5V
UMW FDD8796 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5.7mΩ@10V;Exhaurire fons-on-resistentiam:8mΩ@4.5V
UMW FDS8978 SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):7.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:18mΩ@10V
UMW FDS6690A SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:12.5mΩ@10V;Exhaurire fons-on-resistentiam:12.5mΩ@10V
UMW NTMS4816NR2G SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:10mΩ@10V;Exhaurire fons-on-resistentiam:16mΩ@4.5V
UMW IRF8707TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:11.9mΩ@10V;Exhaurire fons-on-resistentiam:17.5mΩ@4.5V
UMW FDS6912A SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):6A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:28mΩ@10V
UMW FDS8984 SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:23mΩ@10V
UMW IRFR2405TR TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):55V;Continua exhauriunt current (j) (ad XXV ° C):34A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:16mΩ@10V
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