uber Numerus

Image Product Number encapsulation packaging Description Data Sheet
UMW FDN308P SOT-23 卷装 genera:P-Channel;Exhaurire fons-on-resistentiam:-20V;Continua exhauriunt current (j) (ad XXV ° C):-1.5A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:120mΩ@-1.3A,-2.5V;Exhaurire fons-on-resistentiam:100mΩ@-1.5A,-4.5V
UMW ESD7504MUTAG DFN2510 卷装
UMW IRLML6344TR SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):5A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:37mΩ@4A,2.5V;Exhaurire fons-on-resistentiam:29mΩ@5A,4.5V
UMW IRLML2803TR SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):1.2A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:250mΩ@0.91A,10V;Exhaurire fons-on-resistentiam:400mΩ@0.46A,4.5V
UMW IRLML2244TR SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-4.3A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:95mΩ@-3.4A,-2.5V;Exhaurire fons-on-resistentiam:54mΩ@-4.3A,-4.5V
UMW IRLML0040TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):40V;Continua exhauriunt current (j) (ad XXV ° C):6.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:50mΩ@3.6A,10V;Exhaurire fons-on-resistentiam:70mΩ@2.9A,4.5V
UMW IRLML0030TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):5.3A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:40mΩ@4.2A,4.5V;Exhaurire fons-on-resistentiam:27mΩ@5.2A,10V
UMW IRFML8244TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):5.8A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:24mΩ@5.8A,10V;Exhaurire fons-on-resistentiam:41mΩ@4.6A,4.5V
UMW FDV301N SOT23 卷装 genera:N-Channel;Continua exhauriunt current (j) (ad XXV ° C):6A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:50mΩ@4.7A,1.8V;Exhaurire fons-on-resistentiam:42mΩ@4.7A,2.5V;Exhaurire fons-on-resistentiam:28mΩ@5A,4.5V
UMW BSS138PS SOT23 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):50V;Continua exhauriunt current (j) (ad XXV ° C):3A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:2Ω@0.3A,10V;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:2.2Ω@0.2A,4.5V
UMW STN4438 SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):8.2A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:32mΩ@10A,10V;Exhaurire fons-on-resistentiam:37mΩ@8A,4.5V
UMW XL1509-12 SOP-8 卷装
UMW IRLML9303TR SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-12.3A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:165mΩ@-2.3A,-10V;Exhaurire fons-on-resistentiam:270mΩ@-1.8A,-4.5V
UMW IRLML5103TR SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-0.76A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:600mΩ@-0.6A,-10V;Exhaurire fons-on-resistentiam:1000mΩ@-0.3A,-4.5V
UMW IRF7424TR SOP-8 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:13.5mΩ@-11A,-10V;Exhaurire fons-on-resistentiam:22mΩ@-8.8A,-4.5V
UMW IRF7406TR SOP-8 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-6.7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:45mΩ@-2.8A,-10V;Exhaurire fons-on-resistentiam:70mΩ@-2.4A,-4.5V
UMW IRF7403TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):9.7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:22mΩ@4A,10V;Exhaurire fons-on-resistentiam:35mΩ@3.4A,4.5V
UMW IRF7328TR SOP-8 卷装 genera:P+P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-8A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:21mΩ@-8A,-10V;Exhaurire fons-on-resistentiam:32mΩ@-6.8A,-4.5V
UMW FDN352AP SOT-23 卷装 genera:P-Channel;Exhaurire fons-on-resistentiam:-30V;Continua exhauriunt current (j) (ad XXV ° C):-1.3A;Vgs(th)(V):±25;Exhaurire fons-on-resistentiam:180mΩ@-1.3A,-10V;Exhaurire fons-on-resistentiam:300mΩ@-1.1A,-4.5V
UMW 12N10 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):15A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:114mΩ@3A,10V;Exhaurire fons-on-resistentiam:120mΩ@3A,4.5V