uber Numerus

Image Product Number encapsulation packaging Description Data Sheet
UMW BSS123 SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):0.17A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:6mΩ@0.17A,10V;Exhaurire fons-on-resistentiam:10mΩ@0.17A,4.5V
UMW AO4840 SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):40V;Continua exhauriunt current (j) (ad XXV ° C):7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:21mΩ@4.5A,10V;Exhaurire fons-on-resistentiam:25mΩ@4A,4.5V
UMW AO4441 SOP-8 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-60V;Continua exhauriunt current (j) (ad XXV ° C):-4A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:100mΩ@-4A,-10V;Exhaurire fons-on-resistentiam:130mΩ@-3A,-4.5V
UMW FDN358P SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-1.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:90mΩ@-1.5A,-10V;Exhaurire fons-on-resistentiam:150mΩ@-1.2A,-4.5V
UMW ZXMN6A25GTA SOT-223 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):6.7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:50mΩ@3.6A,10V;Exhaurire fons-on-resistentiam:70mΩ@3A,4.5V
UMW NTD25P03LG TO-252 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-26A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:52mΩ@-8A,-2.5V;Exhaurire fons-on-resistentiam:43mΩ@-10A,-4.5V
UMW NDT3055L SOT-223 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):4.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:100mΩ@4A,10V;Exhaurire fons-on-resistentiam:120mΩ@3.7A,4.5V
UMW IRLML6246TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):4.1A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:66mΩ@3.3A,2.5V;Exhaurire fons-on-resistentiam:46mΩ@4.1A,4.5V
UMW IRLML6244TR SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):6.3A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:31mΩ@5.1A,2.5V;Exhaurire fons-on-resistentiam:24mΩ@6.3A,4.5V
UMW IRF7313TR SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):6.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:29mΩ@5.8A,10V;Exhaurire fons-on-resistentiam:46mΩ@4.7A,4.5V
UMW IRF7105TR SOP-8 卷装 genera:N+P-Channel;Exhaurire fons-voltage (Vdss):N: 25V ;P:-25V;Continua exhauriunt current (j) (ad XXV ° C):N: 3.5A; P:-2.3A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:N:100mΩ@1A,10V;P:250mΩ@-1A,-10V;Exhaurire fons-on-resistentiam:N:160mΩ@0.5A,4.5V;P:400@-0.5A,-4.5V
UMW FDN339AN SOT-23 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):3A;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:mΩ@10V;Exhaurire fons-on-resistentiam:50mΩ@2.4A,2.5V;Exhaurire fons-on-resistentiam:38mΩ@3A,4.5V
UMW FDD6685 TO-252 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-40A;Vgs(th)(V):±25;Exhaurire fons-on-resistentiam:34mΩ@-9A,-2.5V;Exhaurire fons-on-resistentiam:26mΩ@-11A,-4.5V
UMW SM4027PSU TO-252 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-40V;Continua exhauriunt current (j) (ad XXV ° C):-50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:17mΩ@-17A,-10V;Exhaurire fons-on-resistentiam:29mΩ@-14A,-4.5V
UMW SI4401BDY SOP-8 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-40V;Continua exhauriunt current (j) (ad XXV ° C):-16.1A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:18mΩ@-10.2A,-10V;Exhaurire fons-on-resistentiam:29mΩ@-8.4A,-4.5V
UMW P5504EDG TO-252 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-40V;Continua exhauriunt current (j) (ad XXV ° C):-50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:17mΩ@-17A,-10V;Exhaurire fons-on-resistentiam:29mΩ@-14A,-4.5V
UMW IRF7303TR SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):5.3A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:50mΩ@2.4A,10V;Exhaurire fons-on-resistentiam:80mΩ@2A,4.5V
UMW IRF7240TR SOP-8 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-40V;Continua exhauriunt current (j) (ad XXV ° C):-10.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:16mΩ@-10.5A,-10V;Exhaurire fons-on-resistentiam:27mΩ@-8.4A,-4.5V
UMW FDN302P SOT-23 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):–2.4 A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:80mΩ@-2A,-2.5V;Exhaurire fons-on-resistentiam:55mΩ@-2.4A,-4.5V
UMW FDD4243 TO-252 卷装 genera:P-Channel;Exhaurire fons-voltage (Vdss):-40V;Continua exhauriunt current (j) (ad XXV ° C):-14A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:44mΩ@-6.7A,-10V;Exhaurire fons-on-resistentiam:64mΩ@-5.5A,-4.5V