uber Numerus

Image Product Number encapsulation packaging Description Data Sheet
UMW FDD6680AS TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:10.5mΩ@12.5A,10V;Exhaurire fons-on-resistentiam:13mΩ@10A,4.5V
UMW FDD8780 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:8.5mΩ@35A,10V;Exhaurire fons-on-resistentiam:12mΩ@35A,4.5V
UMW NTD4860NT4G TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):65A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:7.5mΩ@30A,10V;Exhaurire fons-on-resistentiam:11.1mΩ@30A,4.5V
UMW AOD508 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):70A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:3mΩ@20A,10V;Exhaurire fons-on-resistentiam:4.5mΩ@20A,4.5V
UMW FDD8874 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5.1mΩ@35A,10V;Exhaurire fons-on-resistentiam:6.4mΩ@35A,4.5V
UMW FDD8796 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):25V;Continua exhauriunt current (j) (ad XXV ° C):35A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5.7mΩ@35A,10V;Exhaurire fons-on-resistentiam:8mΩ@35A,4.5V
UMW FDS8978 SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):7.5A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:18mΩ@7.5A,10V;Exhaurire fons-on-resistentiam:21mΩ@6.9A,4.5V
UMW FDS6690A SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:12.5mΩ@11A,10V;Exhaurire fons-on-resistentiam:17mΩ@10A,4.5V
UMW NTMS4816NR2G SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:10mΩ@9A,10V;Exhaurire fons-on-resistentiam:16mΩ@7.2A,4.5V
UMW IRF8707TR SOP-8 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):11A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:11.9mΩ@11A,10V;Exhaurire fons-on-resistentiam:17.5mΩ@8.8A,4.5V
UMW FDS6912A SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):6A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:28mΩ@6A,10V;Exhaurire fons-on-resistentiam:35mΩ@5A,4.5V
UMW FDS8984 SOP-8 卷装 genera:N+N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:23mΩ@7A,10V;Exhaurire fons-on-resistentiam:30mΩ@6A,4.5V
UMW IRFR2405TR TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):55V;Continua exhauriunt current (j) (ad XXV ° C):34A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:16mΩ@34A,10V
UMW NTD5865NLT4G TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):46A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:16mΩ@20A,10V;Exhaurire fons-on-resistentiam:19mΩ@20A,4.5V
UMW NTD5867NLT4G TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):20A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:39mΩ@10A,10V;Exhaurire fons-on-resistentiam:50mΩ@10A,4.5V
UMW NTD3055L104T4G TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):12A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:104mΩ@6A,5V
UMW IRFR4105TR TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):55V;Continua exhauriunt current (j) (ad XXV ° C):27A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:45mΩ@16A,10V
UMW FQD19N10LTM TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):15.6A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:100mΩ@7.8A,10V;Exhaurire fons-on-resistentiam:100mΩ@7.8A,5V
UMW AOD2922 TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:140mΩ@5A,10V;Exhaurire fons-on-resistentiam:176mΩ@3A,4.5V
UMW IRLR120NTR TO-252 卷装 genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):10A;Vgs(th)(V):±16;Exhaurire fons-on-resistentiam:185mΩ@6A,10V;Exhaurire fons-on-resistentiam:225mΩ@6A,5V;Exhaurire fons-on-resistentiam:265mΩ@5A,4V