uber Numerus

Image Product Number encapsulation packaging Description Data Sheet
UMW PSD05C-LF-T7 SOD-323 Roll 反向截止电压(Vrwm):5V;极性/通道数(Channel):1-Line,Bidirectional;击穿电压(VBR):6v;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):9.8V;电容(Cj):175pF
UMW PSR05-LF-T7 SOT-143 Roll 反向截止电压(Vrwm):5V;极性/通道数(Channel):4-Line,Unidirectional;击穿电压(VBR):6V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):9.8V;电容(Cj):3pF
UMW SP485EN SOP-8 Roll
UMW MAX485ESA SOP-8 Roll
UMW SP3485EEN SOP-8 Roll
UMW MAX3485ESA SOP-8 Roll
UMW SVT078R0ND TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):68V;Continua exhauriunt current (j) (ad XXV ° C):88A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:7.5mΩ@30A,10V
UMW STD20NF06L TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):30A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:35mΩ@15A,10V;Exhaurire fons-on-resistentiam:40mΩ@10A,4.5V
UMW 40N06 TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):55A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:18mΩ@30A,10V;Exhaurire fons-on-resistentiam:22mΩ@20A,4.5V
UMW 50N06 T0-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):50A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:17mΩ@30A,10V;Exhaurire fons-on-resistentiam:21mΩ@20A,4.5V
UMW 100N03A TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):90A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:4.9mΩ@30A,10V;Exhaurire fons-on-resistentiam:7.9mΩ@20A,4.5V
UMW 30N03A TO-252 Roll genera:N-Channel;Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):90A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:5mΩ@30A,10V;Exhaurire fons-on-resistentiam:8mΩ@20A,4.5V
UMW 30N06 TO-252 Roll Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):50A;Fons limine portae-voltage:2.5V @ 250uA;Exhaurire fons-on-resistentiam:29mΩ@15A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):34.7W(Tc);genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:40mΩ@10A,4.5V
UMW NDC7002N SOT23-6 Roll Exhaurire fons-voltage (Vdss):50V;Continua exhauriunt current (j) (ad XXV ° C):0.51A;Fons limine portae-voltage:2.5V @ 250uA;Exhaurire fons-on-resistentiam:2Ω@0.51A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):700mW;genera:N+N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:4Ω@0.35A,4.5V
UMW 1N65G SOT-223 Roll Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):1A(Tc);Fons limine portae-voltage:4V @ 250uA;Exhaurire fons-on-resistentiam:11Ω@0.5A,10V;genera:N-Channel;Vgs(th)(V):±30
UMW 15N10 TO-252 Roll Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):15A;Fons limine portae-voltage:2.5V @ 250uA;Exhaurire fons-on-resistentiam:110mΩ@10A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):50W(Tc);genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:130mΩ@5A,4.5V
UMW 2N7002 SOT-23 卷装 Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):1.15A;Fons limine portae-voltage:2.5V @ 250uA;Exhaurire fons-on-resistentiam:5Ω@0.1A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):225mW;genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:7Ω@0.05A,4.5V
UMW SI2302A SOT-23 Roll Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):2.8A;Fons limine portae-voltage:1.9V @ 250uA;Exhaurire fons-on-resistentiam:mΩ@10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:N-Channel;Exhaurire fons-on-resistentiam:60mΩ@3.1A,2.5V;Exhaurire fons-on-resistentiam:45mΩ@3.6A,4.5V
UMW SI2301A SOT-23 Roll Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-2.8A;Fons limine portae-voltage:1V @ 250uA;Exhaurire fons-on-resistentiam:110mΩ@-2A,-2.5V;Maximam vim luxuriae concedit (= ta XXV ° C):400mW;genera:P-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:85mΩ@-2.8A,-4.5V
UMW 8205A SOT-23-6 Roll Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):6A;Fons limine portae-voltage:1.2V @ 250uA;Exhaurire fons-on-resistentiam:36mΩ@3A,2.5V;Maximam vim luxuriae concedit (= ta XXV ° C):830mW;genera:N+N-Channel;Vgs(th)(V):±10;Exhaurire fons-on-resistentiam:36mΩ@5A,4.5V