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UMW FDN338P |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-2.8A;Fons limine portae-voltage:1.5V @ 250uA;Exhaurire fons-on-resistentiam:142mΩ@-2A,-2.5V;Maximam vim luxuriae concedit (= ta XXV ° C):500mW;genera:P-Channel;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:112mΩ@-2.8A,-4.5V |
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UMW IRLML2502TR |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):4.2A;Fons limine portae-voltage:1.2V @ 50uA;Exhaurire fons-on-resistentiam:45mΩ@10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:N-Channel;Exhaurire fons-on-resistentiam:80mΩ@3.6A,2.5V;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:45mΩ@4.2A,4.5V |
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UMW IRLML5203TR |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-3A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:85mΩ@-4.1A,-10V;Maximam vim luxuriae concedit (= ta XXV ° C):300mW;genera:P-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:145mΩ@-3A,-4.5V |
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UMW IRLML6401TR |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-12V;Continua exhauriunt current (j) (ad XXV ° C):-4.3A;Fons limine portae-voltage:950mV @ 250uA;Exhaurire fons-on-resistentiam:125mΩ@-2A,-1.8V;Maximam vim luxuriae concedit (= ta XXV ° C):1.3W;genera:P-Channel;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:85mΩ@-2.5A,-2.5V;Exhaurire fons-on-resistentiam:50mΩ@-4.3A,-4.5V |
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UMW AO3416A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):6A;Fons limine portae-voltage:1.1V @ 250uA;Exhaurire fons-on-resistentiam:mΩ@10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.4W;genera:N-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:51mΩ@5A,1.8V;Exhaurire fons-on-resistentiam:33mΩ@5.5A,2.5V;Exhaurire fons-on-resistentiam:25mΩ@6.5A,4.5V |
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UMW AO3414A |
SOT-23 |
卷装 |
Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):4.2A;Fons limine portae-voltage:1.2V @ 50uA;Exhaurire fons-on-resistentiam:57mΩ@3.2A,1.8V;Maximam vim luxuriae concedit (= ta XXV ° C):400mW;genera:N-Channel;Exhaurire fons-on-resistentiam:36mΩ@3.7A,2.5V;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:26mΩ@4.2A,4.5V |
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UMW AO3404A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):5A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:25mΩ@5.8A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.4W;genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:36mΩ@5A,4.5V |
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UMW AO3409A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-2.6A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:130mΩ@-2.6A,-10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.4W;genera:P-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:200mΩ@-2A,-4.5V |
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UMW SI2312A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):6A;Fons limine portae-voltage:850mV @ 250uA;Exhaurire fons-on-resistentiam:50mΩ@4A,1.8V;Maximam vim luxuriae concedit (= ta XXV ° C):750mW;genera:N-Channel;Exhaurire fons-on-resistentiam:33mΩ@4.5A.2.5V;Exhaurire fons-on-resistentiam:26mΩ@5A,4.5V |
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UMW AO3442A |
SOT-23 |
Roll |
genera:N-Channel;Exhaurire fons-voltage (Vdss):100V;Continua exhauriunt current (j) (ad XXV ° C):1A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:630mΩ@1A,10V;Exhaurire fons-on-resistentiam:720mΩ@0.8A,4.5V |
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UMW AO3413A |
SOT-23 |
Roll |
genera:P-Channel;Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-3A;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:80mΩ@-2.6A,-2.5V;Exhaurire fons-on-resistentiam:66mΩ@-3A,-4.5V |
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UMW AO3403A |
SOT-23 |
Roll |
genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-2.6A;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:75mΩ@-2.6A,-10V;Exhaurire fons-on-resistentiam:85mΩ@-2A,-4.5V |
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UMW SI2319A |
SOT-23 |
Roll |
genera:P-Channel;Exhaurire fons-voltage (Vdss):-40V;Continua exhauriunt current (j) (ad XXV ° C):-4.4A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:70mΩ@-4.4A,-10V;Exhaurire fons-on-resistentiam:95mΩ@-3.5A,-4.5V |
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UMW SI2303A |
SOT-23 |
Roll |
genera:P-Channel;Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-1.7A;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:190mΩ@-1.7A,-10V;Exhaurire fons-on-resistentiam:330mΩ@-1.3A,-4.5V |
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UMW SI2308A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):3A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:80mΩ@3A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:95mΩ@1.9A,4.5V |
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UMW SI2307A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-3A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:50mΩ@-3A,-10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:P-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:70mΩ@-2.5A,-4.5V |
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UMW SI2306A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):4A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:35mΩ@4A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:50mΩ@3.5A,4.5V |
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UMW SI2305A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-4A;Fons limine portae-voltage:500mV @ 250uA(最小);Exhaurire fons-on-resistentiam:50mΩ@-3.4A,-2.5V;Maximam vim luxuriae concedit (= ta XXV ° C):1.38W;genera:P-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:40mΩ@-4.2A,-4.5V |
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UMW BSS84 |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-50V;Continua exhauriunt current (j) (ad XXV ° C):-0.13A;Fons limine portae-voltage:2V @ 1mA;Exhaurire fons-on-resistentiam:10Ω@-0.1A,-5V;Maximam vim luxuriae concedit (= ta XXV ° C):300mW;genera:P-Channel;Vgs(th)(V):±20 |
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UMW BSS138 |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):50V;Continua exhauriunt current (j) (ad XXV ° C):300mA;Fons limine portae-voltage:1.5V @ 250uA;Exhaurire fons-on-resistentiam:2.5Ω @ 500mA,10V;Maximam vim luxuriae concedit (= ta XXV ° C):300mW;genera:N沟道 |
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