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UMW SI2308A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):60V;Continua exhauriunt current (j) (ad XXV ° C):3A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:80mΩ@3A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:95mΩ@1.9A,4.5V |
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UMW SI2307A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-3A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:50mΩ@-3A,-10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:P-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:70mΩ@-2.5A,-4.5V |
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UMW SI2306A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):4A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:35mΩ@4A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.25W;genera:N-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:50mΩ@3.5A,4.5V |
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UMW SI2305A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-4A;Fons limine portae-voltage:500mV @ 250uA(最小);Exhaurire fons-on-resistentiam:50mΩ@-3.4A,-2.5V;Maximam vim luxuriae concedit (= ta XXV ° C):1.38W;genera:P-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:40mΩ@-4.2A,-4.5V |
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UMW BSS84 |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-50V;Continua exhauriunt current (j) (ad XXV ° C):-0.13A;Fons limine portae-voltage:2V @ 1mA;Exhaurire fons-on-resistentiam:10Ω@-0.1A,-5V;Maximam vim luxuriae concedit (= ta XXV ° C):300mW;genera:P-Channel;Vgs(th)(V):±20 |
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UMW BSS138 |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):50V;Continua exhauriunt current (j) (ad XXV ° C):300mA;Fons limine portae-voltage:1.5V @ 250uA;Exhaurire fons-on-resistentiam:2.5Ω @ 500mA,10V;Maximam vim luxuriae concedit (= ta XXV ° C):300mW;genera:N沟道 |
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UMW SI2300A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):20V;Continua exhauriunt current (j) (ad XXV ° C):6A;Fons limine portae-voltage:1V @ 50uA;Exhaurire fons-on-resistentiam:mΩ@10V;genera:N-Channel;Exhaurire fons-on-resistentiam:34mΩ@5.2A,2.5V;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:25mΩ@6A,4.5V |
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UMW AO3415A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-20V;Continua exhauriunt current (j) (ad XXV ° C):-4A;Fons limine portae-voltage:1V @ 250uA;Exhaurire fons-on-resistentiam:60mΩ@-4A,-2.5V;Maximam vim luxuriae concedit (= ta XXV ° C):350mW;genera:P-Channel;Vgs(th)(V):±8;Exhaurire fons-on-resistentiam:36mΩ@-4A,-4.5V |
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UMW AO3407A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-4.2A;Fons limine portae-voltage:3V @ 250uA;Exhaurire fons-on-resistentiam:52mΩ@-4.1A,-10V;Maximam vim luxuriae concedit (= ta XXV ° C):1.4W;genera:P-Channel;Vgs(th)(V):±20;Exhaurire fons-on-resistentiam:70mΩ@-3A,-4.5V |
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UMW AO3402A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):4A;Fons limine portae-voltage:1.4V @ 250uA;Exhaurire fons-on-resistentiam:52mΩ@4A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):350mW;genera:N-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:85mΩ@2A,2.5V;Exhaurire fons-on-resistentiam:65mΩ@3A,4.5V |
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UMW AO3401A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):-30V;Continua exhauriunt current (j) (ad XXV ° C):-4.2A;Fons limine portae-voltage:1.3V @ 250uA;Exhaurire fons-on-resistentiam:50mΩ@-4.2A,-10V;Maximam vim luxuriae concedit (= ta XXV ° C):350mW;genera:P-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:12mΩ@-1A,-2.5V;Exhaurire fons-on-resistentiam:65mΩ@-4A,-4.5V |
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UMW AO3400A |
SOT-23 |
Roll |
Exhaurire fons-voltage (Vdss):30V;Continua exhauriunt current (j) (ad XXV ° C):5.8A;Fons limine portae-voltage:1.4V @ 250uA;Exhaurire fons-on-resistentiam:27mΩ@5.8A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):350mW;genera:N-Channel;Vgs(th)(V):±12;Exhaurire fons-on-resistentiam:48mΩ@4A,2.5V;Exhaurire fons-on-resistentiam:31mΩ@5A,4.5V |
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UMW 1N60G |
SOT-223 |
Roll |
Exhaurire fons-voltage (Vdss):600V;Continua exhauriunt current (j) (ad XXV ° C):1A(Tc);Fons limine portae-voltage:4V @ 250uA;Exhaurire fons-on-resistentiam:11Ω@0.5A,10V;genera:N-Channel;Vgs(th)(V):±30 |
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UMW 10N65F |
TO-220F |
fistulam |
genera:N-Channel;Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):7A;Vgs(th)(V):±30;Exhaurire fons-on-resistentiam:1.9Ω@5A,10V |
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UMW 7N65 |
TO-220F |
fistulam |
Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):7A(Tc);Fons limine portae-voltage:4V @ 250uA;Exhaurire fons-on-resistentiam:1.4mΩ @ 3.5A,10V;genera:N沟道 |
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UMW 5N65F |
TO-220F |
fistulam |
Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):5A(Tc);Fons limine portae-voltage:4V @ 250uA;Exhaurire fons-on-resistentiam:2mΩ@2.5A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):50W(Tc);genera:N-Channel;Vgs(th)(V):±30 |
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UMW 4N65 |
TO-220F |
fistulam |
Exhaurire fons-voltage (Vdss):650V;Continua exhauriunt current (j) (ad XXV ° C):4A(Tc);Fons limine portae-voltage:4V @ 250uA;Exhaurire fons-on-resistentiam:2.8Ω @ 2A,10V;Maximam vim luxuriae concedit (= ta XXV ° C):33W(Tc);genera:N沟道 |
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