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UMW SI2308A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):60V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):3A;Tegangan ambang sumber gerbang:3V @ 250uA;Drain-source on-resistance:80mΩ@3A,10V;Disipasi daya maksimum (Ta = 25 ° C):1.25W;Jenis dari:N-Channel;Vgs(th)(V):±20;Drain-source on-resistance:95mΩ@1.9A,4.5V |
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UMW SI2307A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):-30V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):-3A;Tegangan ambang sumber gerbang:3V @ 250uA;Drain-source on-resistance:50mΩ@-3A,-10V;Disipasi daya maksimum (Ta = 25 ° C):1.25W;Jenis dari:P-Channel;Vgs(th)(V):±20;Drain-source on-resistance:70mΩ@-2.5A,-4.5V |
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UMW SI2306A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):30V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):4A;Tegangan ambang sumber gerbang:3V @ 250uA;Drain-source on-resistance:35mΩ@4A,10V;Disipasi daya maksimum (Ta = 25 ° C):1.25W;Jenis dari:N-Channel;Vgs(th)(V):±20;Drain-source on-resistance:50mΩ@3.5A,4.5V |
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UMW SI2305A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):-20V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):-4A;Tegangan ambang sumber gerbang:500mV @ 250uA(最小);Drain-source on-resistance:50mΩ@-3.4A,-2.5V;Disipasi daya maksimum (Ta = 25 ° C):1.38W;Jenis dari:P-Channel;Vgs(th)(V):±12;Drain-source on-resistance:40mΩ@-4.2A,-4.5V |
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UMW BSS84 |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):-50V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):-0.13A;Tegangan ambang sumber gerbang:2V @ 1mA;Drain-source on-resistance:10Ω@-0.1A,-5V;Disipasi daya maksimum (Ta = 25 ° C):300mW;Jenis dari:P-Channel;Vgs(th)(V):±20 |
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UMW BSS138 |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):50V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):300mA;Tegangan ambang sumber gerbang:1.5V @ 250uA;Drain-source on-resistance:2.5Ω @ 500mA,10V;Disipasi daya maksimum (Ta = 25 ° C):300mW;Jenis dari:N沟道 |
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UMW SI2300A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):20V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):6A;Tegangan ambang sumber gerbang:1V @ 50uA;Drain-source on-resistance:mΩ@10V;Jenis dari:N-Channel;Drain-source on-resistance:34mΩ@5.2A,2.5V;Vgs(th)(V):±12;Drain-source on-resistance:25mΩ@6A,4.5V |
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UMW AO3415A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):-20V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):-4A;Tegangan ambang sumber gerbang:1V @ 250uA;Drain-source on-resistance:60mΩ@-4A,-2.5V;Disipasi daya maksimum (Ta = 25 ° C):350mW;Jenis dari:P-Channel;Vgs(th)(V):±8;Drain-source on-resistance:36mΩ@-4A,-4.5V |
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UMW AO3407A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):-30V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):-4.2A;Tegangan ambang sumber gerbang:3V @ 250uA;Drain-source on-resistance:52mΩ@-4.1A,-10V;Disipasi daya maksimum (Ta = 25 ° C):1.4W;Jenis dari:P-Channel;Vgs(th)(V):±20;Drain-source on-resistance:70mΩ@-3A,-4.5V |
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UMW AO3402A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):30V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):4A;Tegangan ambang sumber gerbang:1.4V @ 250uA;Drain-source on-resistance:52mΩ@4A,10V;Disipasi daya maksimum (Ta = 25 ° C):350mW;Jenis dari:N-Channel;Vgs(th)(V):±12;Drain-source on-resistance:85mΩ@2A,2.5V;Drain-source on-resistance:65mΩ@3A,4.5V |
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UMW AO3401A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):-30V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):-4.2A;Tegangan ambang sumber gerbang:1.3V @ 250uA;Drain-source on-resistance:50mΩ@-4.2A,-10V;Disipasi daya maksimum (Ta = 25 ° C):350mW;Jenis dari:P-Channel;Vgs(th)(V):±12;Drain-source on-resistance:12mΩ@-1A,-2.5V;Drain-source on-resistance:65mΩ@-4A,-4.5V |
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UMW AO3400A |
SOT-23 |
Gulungan |
Tegangan sumber drain (Vdss):30V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):5.8A;Tegangan ambang sumber gerbang:1.4V @ 250uA;Drain-source on-resistance:27mΩ@5.8A,10V;Disipasi daya maksimum (Ta = 25 ° C):350mW;Jenis dari:N-Channel;Vgs(th)(V):±12;Drain-source on-resistance:48mΩ@4A,2.5V;Drain-source on-resistance:31mΩ@5A,4.5V |
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UMW 1N60G |
SOT-223 |
Gulungan |
Tegangan sumber drain (Vdss):600V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):1A(Tc);Tegangan ambang sumber gerbang:4V @ 250uA;Drain-source on-resistance:11Ω@0.5A,10V;Jenis dari:N-Channel;Vgs(th)(V):±30 |
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UMW 10N65F |
TO-220F |
Tabung |
Jenis dari:N-Channel;Tegangan sumber drain (Vdss):650V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):7A;Vgs(th)(V):±30;Drain-source on-resistance:1.9Ω@5A,10V |
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UMW 7N65 |
TO-220F |
Tabung |
Tegangan sumber drain (Vdss):650V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):7A(Tc);Tegangan ambang sumber gerbang:4V @ 250uA;Drain-source on-resistance:1.4mΩ @ 3.5A,10V;Jenis dari:N沟道 |
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UMW 5N65F |
TO-220F |
Tabung |
Tegangan sumber drain (Vdss):650V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):5A(Tc);Tegangan ambang sumber gerbang:4V @ 250uA;Drain-source on-resistance:2mΩ@2.5A,10V;Disipasi daya maksimum (Ta = 25 ° C):50W(Tc);Jenis dari:N-Channel;Vgs(th)(V):±30 |
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UMW 4N65 |
TO-220F |
Tabung |
Tegangan sumber drain (Vdss):650V;Pengurasan arus berkelanjutan (Id) (pada 25 ° C):4A(Tc);Tegangan ambang sumber gerbang:4V @ 250uA;Drain-source on-resistance:2.8Ω @ 2A,10V;Disipasi daya maksimum (Ta = 25 ° C):33W(Tc);Jenis dari:N沟道 |
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